PART |
Description |
Maker |
SDR3006ZS SDR3006MS |
30A 80nsec 400 to 600 V Ultrafast Rectifier 30A0nsec 40000 V超快整流 30A 80nsec 400 to 600 V Ultrafast Rectifier 30A0nsec 400600 V超快整流
|
Solid State Devices, Inc.
|
SDR3006ZTXV SDR3004MS SDR3004MTX SDR3004MTXV SDR30 |
30A 80nsec 400 to 600 V Ultrafast Rectifier
|
SSDI[Solid States Devices, Inc]
|
SDR1N SDR1A SDR1B SDR1D SDR1G SDR1J SDR1K SDR1M |
1 AMP ULTRA FAST RECOVERY RECTIFIER 50-1200 VOLTS
|
SSDI[Solid States Devices, Inc]
|
SDR1212UF SDR1210 SDR1210HBUFDBS SDR1210HBUFDBTX S |
12 AMP 1000 - 1200 VOLTS 75 nsec ULTRA FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
SDR999P SDR9910N SDR9910P SDR9911N SDR9911P SDR991 |
50 AMP 800 -1200 Volts 80 nsec Ultra Fast Recovery Rectifier
|
SSDI[Solid States Devices, Inc]
|
SDR1A |
1 AMP ULTRA FAST RECOVERY RECTIFIER 50-1200 VOLTS 1 A, 50 V, SILICON, SIGNAL DIODE
|
Solid State Devices, Inc.
|
SDR1308SMS SDR1304 SDR1304SMS SDR1306 SDR1308 |
3 AMP, 400 - 800 Volts 70 nsec, Ultra Fast Rectifier
|
SSDI[Solid States Devices, Inc]
|
APT75GN120J |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
APT35GN120L2DQ2 APT35GN120L2DQ2G |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: 264 MAX™ [L2]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 46; 94 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp. Advanced Power Technology
|
TM400DZ-24 |
Dual SCR Module (400 Amperes/1200 Volts)
|
Powerex Power Semiconductors
|
SDA188DECAUF SDA188DECAUFS SDA188DECAUFTX SDA188DE |
50 Amps Centertap Ultra Fast Rectifier Assembly 400 - 900 Volts 50 A, 400 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc http:// SOLID STATE DEVICES INC Solid States Devices, I...
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